FEATURES
･BROAD BAND 2-STAGE AMPLIFIER ･HIGH POWER
Pout= 44.0dBm at Pin= 23.0dBm ･HIGH GAIN
GL= 24dB(Typ) at Pin= 7dBm ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaN AMPLIFIER
TGM9398-25
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power Drain Current Power Added Efficiency Linear Gain IDD=IDD1+ IDD2
SYMBOL
CONDITIONS
Pout IDD*
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