TGPF30N40P

TGPF30N40P Features: 400V Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification Applications : Plasma Display Panel, Soft switching application, C GCE Ordering Part Number TGPF30N40P TGPF30N40P-R TGPF30N40P-L Package TO-220F TO-220F(R-Forming) TO-220F(L-Forming) Packaging type Tube Tube Tube Marking TGPF30N40P TGPF30N40P TGPF30N40P Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM PD TJ TSTG TL Value 400 ±30 60 30 300 20.8 8.3 -55 ~ 150 -55 ~ 150 300 Notes : (1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%. Remark RoHS RoHS RoHS Unit V V A A A W W ℃ ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC RθJA August. 2012 : Rev0 www.trinnotech.com Value 6.0 62.5 Unit ℃/W ℃/W 1/6 TGPF30N40P Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leaka...