TGPF30N43P
Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification
Applications :
Plasma Display Panel, Soft switching application,
C GCE
Ordering Part Number TGPF30N43P
TGPF30N43P-R TGPF30N43P-L
Package TO-220F TO-220F(R-Forming) TO-220F(L-Forming)
Packaging type Tube Tube Tube
Marking TGPF30N43P TGPF30N43P TGPF30N43P
Absolute Maximum Ratings
Parameter
Collector-E.
Field Stop Trench IGBT
TGPF30N43P
Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification
Applications :
Plasma Display Panel, Soft switching application,
C GCE
Ordering Part Number TGPF30N43P
TGPF30N43P-R TGPF30N43P-L
Package TO-220F TO-220F(R-Forming) TO-220F(L-Forming)
Packaging type Tube Tube Tube
Marking TGPF30N43P TGPF30N43P TGPF30N43P
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power Dissipation Operating Junction Temperature
TC = 25 ℃ TC = 100 ℃
TC = 25 ℃ TC = 100 ℃
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
Ic
ICM
PD
TJ TSTG TL
Value 430 ±30 60 30 300 20.8 8.3 -55 ~ 150 -55 ~ 150
300
Notes : (1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%.
Remark RoHS RoHS RoHS
Unit V V A A A W W ℃ ℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RθJC RθJA
August 2012 : Rev0
www.trinnotech.com
Value 6.0 62.5
Unit ℃/W ℃/W
1/6
TGPF30N43P
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leakag.