Product Data Sheet
August 5, 2008
High Power DC - 18GHz SPDT FET Switch
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TGS2306
Key Features and Perf...
Product Data Sheet
August 5, 2008
High Power DC - 18GHz SPDT FET Switch
TGS2306
Key Features and Performance
DC - 18 GHz Frequency Range 29 dBm Input P1dB @ VC = -5V > 30 dB Isolation <1 nsec switching speed Control
Voltage Application from Either Side of MMIC -3V or -5V Control
Voltage 0.5µm pHEMT 3MI Technology Chip Dimensions: 0.83 x 1.11 x 0.10 mm (0.033 x 0.044 x 0.004 inches)
Preliminary Measured Performance
VC1 = 0V; VC2 = -5V
0 -2 -4 -6 -8 S21 S11 S22 S13 10
Description
The TriQuint TGS2306 is a GaAs singlepole, double-throw (SPDT) FET monolithic switch designed to operate over the DC to 18GHz frequency range. This switch not only maintains a high isolation loss and a low insertion loss across a wide bandwidth, but also has very low power consumption and high power handling of 29dBm or greater input P1dB at VC = 5V. These advantages, along with the small size of the chip, make the TGS2306 ideal for use in high-speed radar and communication applications.
Isolation, Return Loss (dB)
5
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Insertion Loss (dB)
0 -5 -10 -15 -20 -25 -30 -35 -40
-10 0 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20
Note: Datasheet is subject to change without notice
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email:
[email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008
TABLE I MAXIMUM RATINGS Symbol Parameter Value
TGS2306
Notes
VC IC PIN PD TCH TM TSTG 1/ 2/...