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TGS2306

TriQuint Semiconductor

High Power DC - 18 GHz SPDT FET Switch

Product Data Sheet August 5, 2008 High Power DC - 18GHz SPDT FET Switch • • • • • • • • TGS2306 Key Features and Perf...


TriQuint Semiconductor

TGS2306

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Description
Product Data Sheet August 5, 2008 High Power DC - 18GHz SPDT FET Switch TGS2306 Key Features and Performance DC - 18 GHz Frequency Range 29 dBm Input P1dB @ VC = -5V > 30 dB Isolation <1 nsec switching speed Control Voltage Application from Either Side of MMIC -3V or -5V Control Voltage 0.5µm pHEMT 3MI Technology Chip Dimensions: 0.83 x 1.11 x 0.10 mm (0.033 x 0.044 x 0.004 inches) Preliminary Measured Performance VC1 = 0V; VC2 = -5V 0 -2 -4 -6 -8 S21 S11 S22 S13 10 Description The TriQuint TGS2306 is a GaAs singlepole, double-throw (SPDT) FET monolithic switch designed to operate over the DC to 18GHz frequency range. This switch not only maintains a high isolation loss and a low insertion loss across a wide bandwidth, but also has very low power consumption and high power handling of 29dBm or greater input P1dB at VC = 5V. These advantages, along with the small size of the chip, make the TGS2306 ideal for use in high-speed radar and communication applications. Isolation, Return Loss (dB) 5 www.DataSheet.net/ Insertion Loss (dB) 0 -5 -10 -15 -20 -25 -30 -35 -40 -10 0 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 Note: Datasheet is subject to change without notice 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 TABLE I MAXIMUM RATINGS Symbol Parameter Value TGS2306 Notes VC IC PIN PD TCH TM TSTG 1/ 2/...




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