TH562

SD1731 (TH562) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CO DE SD1731 BRANDING TH562 PIN CONNECTION DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Valu e Un it 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation (Theatsink ≤ 25°C) Junction Temperature Storage Temperature 110 55 4.0 20 233 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) RTH(c-s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance 0.55 0.2 °C/W °C/W 1/7 July 10, 1995 SD1731 (TH562) ELECTRICAL SPECIFICATIONS STATIC (Tcase = 25°C) Symbo l T est Co nditions Value Min . T yp. Max. Unit BVCBO BVCEO BVEBO ICEO ICES hFE IC = 200 mA IC = 200 mA IE = 20 mA VCE = 30 V VCE = 55 V VCE = 6 V IE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IE = 0 mA IC = 10 A 110 55 4.0 — — 15 — — — — — — — — — 5 10 80 V V V mA mA — DYNAMIC (Theatsink = 25°C) Symbo l Test Cond ition s Valu e Min. T yp. Max. Un it POUT GP * IMD* ηc* COB f = 30 MHz POUT = 220 W PEP POUT = 220 W PEP POUT = 220 W PEP f = 1 MHz V...