PROTECTION. THBT200S Datasheet

THBT200S Datasheet PDF

Part THBT200S
Description TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
Feature THBT200S; ® THBT200S TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION Application Specific Discretes A.S.D.™.
Manufacture STMicroelectronics
Datasheet
Download THBT200S Datasheet

® THBT200S TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION THBT200S Datasheet
® THBT200S1 TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTIO THBT200S1 Datasheet





THBT200S
®
Application Specific Discretes
A.S.D.
THBT200S
TRANSIENT VOLTAGE SUPPRESSOR
FOR SLIC PROTECTION
FEATURES
DUAL BIDIRECTIONALCROWBARPROTECTION.
PEAK PULSE CURRENT :
- IPP = 75 A, 10/1000 µs.
HOLDING CURRENT = 150 mA min
BREAKDOWN VOLTAGE = 200 V min.
BREAKOVER VOLTAGE = 290 V max.
MONOLITHIC DEVICE.
DESCRIPTION
This monolithic protection device has been espe-
cially designed to protect subscriber line cards.The
THBT200 device is particularly suitable to protect
ring generator relay against transient overvol-
tages.
SIP3
COMPLIESWITHTHE FOLLOWINGSTANDARDS:
CCITT K20 :
10/700 µs
5/310 µs
VDE 0433 :
10/700 µs
5/310 µs
VDE 0878 :
1.2/50 µs
1/20 µs
FCC part 68 :
2/10 µs
2/20µs
BELLCORE
TR-NWT-001089 :
2/10 µs
2/10µs
10/1000µs
10/1000µs
(*) with series resistors or PTC.
1kV
25A
2kV
50A
1.5kV
40A
2.5kV
225A (*)
2.5kV
225A (*)
1kV
75A (*)
SCHEMATIC DIAGRAM
NC
T ip
GND
R in g
1
2
3
4
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
February 1998 Ed: 2
1/7



THBT200S
THBT200S
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C)
Symbol
Parameter
IPP Peak pulse current (see note 1)
10/1000 µs
5/310 µs
8/20 µs
2/10 µs
ITSM Non repetitive surge peak on-state current
(F = 50Hz)
tp = 20ms
Tstg Storage temperature range
Tj Maximum junction temperature
TL Maximum lead temperature for soldering during 10s
Value
75
125
150
225
30
- 40 to + 150
150
230
Unit
A
A
°C
°C
Note 1 : Pulse waveform :
10/1000µs tr=10µs
5/310µs
tr=5µs
2/10µs
tr=2µs
tp=1000µs
tp=310µs
tp=10µs
THERMAL RESISTANCE
Symbol
Rth (j-a) Junction to ambient
Parameter
% IPP
100
50
0
tr tp
t
Value
80
Unit
°C/W
2/7
®



THBT200S
ELECTRICAL CHARACTERISTICS (Tamb = 25°C).
Symbol
Parameter
VRM Stand-off voltage
IRM Leakage current at VRM
VBR Continuous reverse voltage
VBO Breakover voltage
IH Holding current
IBO Breakover current
IPP Peak pulse current
C Capacitance
THBT200S
I
Ipp
IBO
IH
IRM
V
VRM VBR VBO
PARAMETERS RELATED TO ONE TRISIL (Between TIP and GND or RING and GND)
IRM @ VRM
VBR @ IR
VBO @ IBO
IH
max.
min.
max.
min.
max.
min.
note 1
note 2
µA V
V mA V mA mA mA
10 180 200 1 290
Note 1 :
Note 2 :
Note 3 :
See reference test circuit 1 for IBO and VBO parameters.
See test circuit 2.
VR = 1V, F = 1MHz.
150 800 150
C
max.
note 3
pF
200
3/7
®






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