DRAM. THM81000L-12 Datasheet

THM81000L-12 Datasheet PDF

Part THM81000L-12
Description DRAM
Feature TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 8 BIT DYNAMIC RAM MODULE THM81 000S/L-1 0/12 JOESCRI.
Manufacture Toshiba
Datasheet
Download THM81000L-12 Datasheet

TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 8 BIT DYNAMIC THM81000L-12 Datasheet





THM81000L-12
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 8 BIT
DYNAMIC RAM MODULE
THM81 000S/L-1 0/12
JOESCRIPTION/
The THM8l000S/L is a 1,048,576 words by 8 bits dynamic RAM module which assembled
8 pcs of TC5ll000J on the printed circuit board.
The THM8l000S/L is optimized for application to the systems which are required
high density and large capacity such as main memory of the computers and an image
memory systems, and to the others which are requested compact size.
IFEATURESI
• 1,048,576 words by 8 bits organization
• Fast access time
tRAC
tAA
tCAC
tRC
tpc
RAS Access Time
Column Address Access Time
CAS Access Time
Cycle Time
Fast Page Mode Cycle Time
TIDI8l000S/L-lO
lOOns
50ns
35ns
190ns
55ns
THM8l000S/L-12
l20ns
60ns
45ns
220ns
70ns
• Single power supply of 5V+lO%
• Low power
2,640mW MAX. Operating (TID18l000S/L-10)
2,200mW MAX. Operating (TID18l000S/L-12)
44mW MAX. Standby
CAS before RAS refresh, RAS only refresh, Hidden refresh, and Fast P~ge ~lode
capability.
• All inputs and outputs TTL compatible
• 512 refresh cycles/8ms
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Address Inputs
Data Input/Outputs
CAS Column Address Strobe
RAS Row Address Strobe
H Read/Write Input
VCC Pmver (+5V)
VSS Ground
N.C. No Connection
-A-175 -



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