isc Thyristors
TIC106N
APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Glass passivated ·Max IGT of ...
isc Thyristors
TIC106N
APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Glass passivated ·Max IGT of 200μA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state
voltage
VRRM Repetitive peak reverse
voltage
IT(AV) On-state current Tc=80℃
IT(RMS) RMS on-state current Tc=80℃
ITM Surge peak on-state current
PGM Peak gate power PW≤300μs
PG(AV) Average gate power
Tj
Operating Junction temperature
Tstg Storage temperature
Rth(j-c) Thermal resistance, junction to case
Rth(j-a) Thermal resistance, junction to ambient
MIN
800 800 3.2
5 30 1.3 0.3 110 -40 ~+125 1.9 62.5
UNIT
V
V A A A W W ℃ ℃ ℃/W ℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
IRRM IDRM
Repetitive peak reverse current Repetitive peak off-state current
VRM=VRRM,
VRM=VRRM, Tj=110℃
VDM=VDRM,
VDM=VDRM, Tj=110℃
0.4 1.0
mA
0.4 1.0
mA
VTM On-state
voltage
ITM= 5A
1.7 V
IGT
Gate-trigger current
VAA=6V; RL=1kΩ
200 μA
VGT Gate-trigger
voltage
VAA=6V; RL=100Ω
1.0 V
IH
Holding current
VAA=6V; RGK=1kΩ, IT= 10mA
5 mA
isc website:www.iscsemi.cn
1
isc & iscsemi is registered trademark
isc Thyristors
TIC106N
Notice:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented onl...