TIC106S

isc Thyristors INCHANGE Semiconductor TIC106series DESCRIPTION ·5A contimunous on-state current ·30A surge-current ·Glass passivated ·Max IGT of 200μA ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC106D 400 VDRM Repetitive voltage peakoff-state TIC106M TIC106S 600 700 V TIC106N 800 TIC106D 400 VRRM Repetitive voltage peakreverse TIC106M TIC106S 600 700 V TIC106N 800 IT(AV) IT(RMS) ITM PGM PG(AV) Tj Tstg On-state current Tc=80℃ RMS on-state current Tc=80℃ Surge peak on-state current Peak gate power PW≤300μs Average gate power Operating Junction temperature Storage temperature 3.2 A 5 A 30 A 1.3 W 0.3 W 110 ℃ -40 ~+125 ℃ isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Thyristors THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient INCHANGE Semiconductor TIC106series MIN TYP MAX UNIT 3.5 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current VRM=VRRM, VRM=VRRM, Tj=110℃ VDM=VDRM, VDM=VDRM, Tj=110℃ VTM On-state voltage ITM= 5A IGT Gate-trigger current VAA=6V; RL=1KΩ VGT Gate-trigger voltage VAA=6V; RL=100Ω MIN TYP. MAX UNIT 0.4 1.0 mA 0.4 1.0 mA 1.7 V 200 μA 1.2 V IH Holding ...