isc Thyristors
TIC116D
APPLICATIONS ·8A contimunous on-state current ·80A surge-current ·Glass passivated ·Max IGT of ...
isc Thyristors
TIC116D
APPLICATIONS ·8A contimunous on-state current ·80A surge-current ·Glass passivated ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state
voltage
VRRM Repetitive peak reverse
voltage
IT(AV) On-state current Tc=80℃
IT(RMS) RMS on-state current Tc=80℃
ITM Surge peak on-state current
PGM Peak gate power PW≤300μs
PG(AV) Average gate power
Tj
Operating Junction temperature
Tstg Storage temperature
Rth(j-c) Thermal resistance, junction to case
Rth(j-a) Thermal resistance, junction to ambient
MIN
400 400
5 8 80 5 1 110 -40 ~+125 3 62.5
UNIT
V
V A A A W W ℃ ℃ ℃/W ℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
IRRM Repetitive peak reverse current VRM=VRRM, Tj=110℃
2.0 mA
IDRM Repetitive peak off-state current VRM=VRRM, Tj=110℃
2.0 mA
VTM On-state
voltage
ITM= 8A
1.7 V
IGT
Gate-trigger current
VAA=6V; RL=100Ω
20 mA
VGT Gate-trigger
voltage
VAA=6V; RL=100Ω
1.5 V
IH
Holding current
VAA=6V; RGK=1kΩ,IT=100mA
40 mA
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