TIC201

TIC201 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK JANUARY 1977 - REVISED MARCH 1997 q q q q q Sensitive Gate Triacs 2.5 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrant 1) MT1 MT2 G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC201D Repetitive peak off-state voltage (see Note 1) TIC201M TIC201S TIC201N Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) Peak on-state surge current full-sine-wave (see Note 3) Peak on-state surge current half-sine-wave (see Note 4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µ s) Average gate power dissipation at (or below) 85°C case temperature (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 2.5 12 14 ±0.2 1.3 0.3 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V UNIT NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 100 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is op...