TIC216A

SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S SILICON TRIACS 6 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1-3) Sensitive gate triacs Compliance to ROH ABSOLUTE MAXIMUM RATINGS Value A VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak on-state surge current half-sine-wave (see Note4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 µs) Average gate power dissipation at (or below) 85°C case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds http://www.DataSheet4U.net/ Symbol Ratings B Unit S N V A A A A W W °C °C °C D M 100 200 400 600 700 800 6 60 70 ±1 2.2 0.9 -40 to +110 -40 to +125 230 THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance Value ≤ 2.5 ≤ 62.5 Unit °C/W 30/10/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Repetitive peak off-state current Gate trigger current Test Condition(s) VD = Rated VDRM, , IG = 0 TC = 110°C Vsupply ...