isc Triacs
TIC216M
FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants ...
isc Triacs
TIC216M
FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state
voltage
VRRM Repetitive peak reverse
voltage
IT(RMS) RMS on-state current (full sine wave)TC=70℃
ITSM Non-repetitive peak on-state current
Tj
Operating junction temperature
Tstg Storage temperature
Rth(j-c) Thermal resistance, junction to case
Rth(j-a) Thermal resistance, junction to ambient
MIN
600 600
6 60 110 -45~150 2.5 62.5
UNIT
V V A A ℃ ℃ ℃/W ℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IDRM Repetitive peak off-state current VD=VDRM, TC=110℃
IGT
Gate trigger current
Ⅰ
Ⅱ
Ⅲ
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
Ⅳ
IH
Holding current
VGT Gate trigger
voltage
Vsupply = 12 V†, IG= 0 initial ITM= 100mA Ⅰ Ⅱ
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅲ Ⅳ
VTM On-state
voltage
IT= 8.4A; IG= 50mA
MAX UNIT
2.0 mA
5
5
5
mA
10
30
mA
2.2
2.2 V
2.2
3.0
1.7
V
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1
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Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general ele...