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TIC225M

Inchange Semiconductor

Triacs

isc Triacs TIC225M FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants ...


Inchange Semiconductor

TIC225M

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isc Triacs TIC225M FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS on-state current (full sine wave)TC=70℃ 8 A ITSM Non-repetitive peak on-state current 70 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermal resistance, junction to case 2.5 ℃/W Rth(j-a) Thermal resistance, junction to ambient 62.5 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IDRM Repetitive peak off-state current VD=VDRM, TC=110℃ Ⅰ IGT Gate trigger current Ⅱ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅲ Ⅳ IH Holding current Vsupply = 12 V†, IG= 0 initial ITM= 100mA VGT Gate trigger voltage all quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs VTM On-state voltage IT= 12A; IG= 50mA MAX UNIT 2.0 mA 5 20 mA 10 30 20 mA 2 V 2.1 V isc website:www.iscsemi.cn 1 isc&iscsemi is registered trademark Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electr...




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