SEMICONDUCTORS
TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225N, TIC225S SILICON BIDIRECTIONAL TRIODE THYR...
SEMICONDUCTORS
TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225N, TIC225S SILICON BIDIRECTIONAL TRIODE THYRISTOR
Sensitive gate triacs 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State
Voltage Max IGT of 50 mA (Quadrants 1) Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
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Symbol
VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL
Ratings A
Repetitive peak off-state
voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak on-state surge current half-sine-wave (see Note4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 µs) Average gate power dissipation at (or below) 85°C case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds
Value B C D E M S N
Unit
100 200 300 400 500 600 700 800 8 70 8 ±1 2.2 0.9 -40 to +110 -40 to +125 230
V A A A A W W °C °C °C
30/10/2012
COMSET SEMICONDUCTORS
1|4
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225N, TIC225S
THERMAL CHARACTERISTICS Symbol
R∂JC R∂JA
Ratings
Junction to case ther...