DatasheetsPDF.com

TIC226 Datasheet

Part Number TIC226
Manufacturers INCHANGE
Logo INCHANGE
Description Triac
Datasheet TIC226 DatasheetTIC226 Datasheet (PDF)

isc Triacs INCHANGE Semiconductor TIC226series DESCRIPTION ·8A RMS ,70A Peak ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 50mA(Quadrants 1-3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC226D 400 VDRM Repetitive voltage peakoff-state TIC226M TIC226S 600 700 V TIC226N 800 TIC226D 400 VRRM Repetitive voltage peakreverse TIC226M TI.

  TIC226   TIC226






Part Number TIC226
Manufacturers BOURNS
Logo BOURNS
Description SILICON TRIACS
Datasheet TIC226 DatasheetTIC226 Datasheet (PDF)

TIC226 SERIES SILICON TRIACS 8 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3) This series is currently available, but not recommended for new designs. MT1 MT2 G TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC226D Repetitive peak off-state voltage (see Note 1) TIC226M TIC226S TIC226N Full-cycle RMS .

  TIC226   TIC226







Triac

isc Triacs INCHANGE Semiconductor TIC226series DESCRIPTION ·8A RMS ,70A Peak ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 50mA(Quadrants 1-3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC226D 400 VDRM Repetitive voltage peakoff-state TIC226M TIC226S 600 700 V TIC226N 800 TIC226D 400 VRRM Repetitive voltage peakreverse TIC226M TIC226S 600 700 V TIC226N 800 IT(RMS) RMS on-state current (full sine wave)TC=85℃ 8 A ITSM Non-repetitive peak on-state current 70 A PGM Peak gate power PW≤200μs 2.2 W PG(AV) Average gate power 0.9 W Tj Operating Junction temperature 110 ℃ Tstg Storage temperature -40 ~+125 ℃ isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Triacs INCHANGE Semiconductor TIC226series THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient TYP MAX UNIT 1.8 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current Ⅰ VRM=VRRM, VRM=VRRM, Tj=110℃ VDM=VDRM, VDM=VDRM, Tj=110℃ IGT Gate trigger current Ⅱ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅲ Ⅳ IH Holding current Vsupply = 12 V†,IG= 0 initial ITM=100mA VGT Gate trigger voltageall quadrant Vsupply = 1.


2020-09-16 : 2SA1010    2SA1006A    2SA981    2SA900    2SA1386A    ADC32RF83    ADC32J43    ADC32J22    ADC32J23    ADC3223   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)