isc Triacs
TIC226M
FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants...
isc Triacs
TIC226M
FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM Repetitive peak off-state
voltage
600
V
VRRM Repetitive peak reverse
voltage
600
V
IT(RMS) RMS on-state current (full sine wave)TC=85℃
8
A
ITSM Non-repetitive peak on-state current
70
A
Tj
Operating junction temperature
110
℃
Tstg Storage temperature
-45~125 ℃
Rth(j-c) Thermal resistance, junction to case
1.8 ℃/W
Rth(j-a) Thermal resistance, junction to ambient
62.5 ℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
TYP. MAX UNIT
IDRM Repetitive peak off-state current VD=VDRM, TC=110℃
2.0 mA
IGT
Gate trigger current
Ⅰ
Ⅱ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
Ⅲ
Ⅳ
2 50
12 50 mA 9 50 20
IH
Holding current
Vsupply = 12 V†,IG= 0 initial ITM=100mA
30 mA
VGT
Gate trigger
voltageall quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
2
V
VTM On-state
voltage
IT= 12A; IG= 50mA
2.1 V
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Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in gen...
