FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 9.5GHz to 10.5GHz ･HIGH GAIN
G1dB= 7.0dB at 9.5...
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.0dBm at 9.5GHz to 10.5GHz ･HIGH GAIN
G1dB= 7.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM0910-15L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 9V IDSset= 4.0A f = 9.5 to 10.5GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 30.0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 100
MIN. 41.0 6.0 -42
TYP. MAX.
42.0
7.0
4.5
5.5
±0.8
31
-45
4.5
5.5
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current Gate-Source Breakdown
Voltage Thermal Resistance
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 4.8A
VDS= 3V IDS= 145mA
VDS= 3V VGS= 0V
VGSO IGS= -145A
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
3.0
V
-1.5 -3.0 -4.5
A
10.0
V
-5
°C/W
2.0
2.5
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or an...
