FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN
G1dB= 7.0dB at 10...
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN
G1dB= 7.0dB at 10.7GHz to 11.7GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1011-5L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C)
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB
G1dB IDS1
VDS= 9V IDSset= 2.0A f=10.7 to 11.7 GHz
UNIT dBm dB
A
Gain Flatness
G
dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 25.0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 150
MIN. 37.0 6.0 -42
TYP. MAX.
37.5
7.0
2.0
2.5
±0.8
25
-45
4.5
5.5
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current Gate-Source Breakdown
Voltage Thermal Resistance
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 2.4A
VDS= 3V IDS= 72mA
VDS= 3V VGS= 0V
VGSO IGS= -72A
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
1.5
V
-1.5 -3.0 -4.5
A
5.0
V
-5
°C/W
3.0
3.7
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any...
