FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN
G1dB= 6.0dB at 12.7GHz to 13.2GHz ･LOW INTERMODULATION DISTORTION
IM3= -28dBc at Pout= 36.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1213-18L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power ...
