TIM1213-30L

MICROWAVE POWER GaAs FET TIM1213-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 12.7GHz to 13.2GHz ŋHIGH GAIN G1dB= 5.5dB at 12.7GHz to 13.2GHz ŋLOW INTERMODULATION DISTORTION IM3= -28dBc at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 7.0A f= 12.7 to 13.2GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test dBc Po= 38dBm, f= 5MHz (Single Carrier Level) A (VDS  IDS  Pin  P1dB)  Rth(c-c) °C Recommended Gate Resistance (Rg): 10  MIN. 44.0 4.5    -25   TYP. MAX. 45.0  5.5  10.0 11.0  0.8 23  -28  9.0 10.1  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 9.6A VDS= 3V IDS= 290mA VDS= 3V VGS= 0V VGSO IGS= -290A Thermal Resistance Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  5.5  V -0.7 -2.0 -4.5 A  20.0  V -5 °C/W    1.0 1.1  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORA...