MICROWAVE POWER GaAs FET
TIM1314-15UL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 42.0dBm at 13.75GHz ...
MICROWAVE POWER GaAs FET
TIM1314-15UL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN
G1dB= 7.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -42dBc(Min.) at Pout= 30dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 4.0A f= 13.75 to 14.5GHz
UNIT dBm dB
A dB
Power Added Efficiency 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
add IM3 IDS2 Tch
%
Two-Tone Test Po= 30dBm, f= 5MHz
dBc
(Single Carrier Level)
A
(VDS IDS Pin P1dB)
Rth(c-c)
°C
Recommended Gate Resistance(Rg): 100
MIN. 41.0 6.0 -42
TYP. MAX.
42.0
7.0
4.0
5.0
0.8
32
-45
4.0
5.0
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V
Gate-Source Breakdown
Voltage
VGSO IGS= -145A
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
4.0
V
-0.5 -2.0 -4.5
A
8.0
V
-5
°C/W
2.0
2.5
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