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TIM1414-10LA-252 Datasheet

Part Number TIM1414-10LA-252
Manufacturers Toshiba
Logo Toshiba
Description Microwave Power GaAs FET
Datasheet TIM1414-10LA-252 DatasheetTIM1414-10LA-252 Datasheet (PDF)

www.DataSheet4U.com TOSHIBA Oct. 1999 TIM1414-10LA-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Channel Temperature Rise SYMBOL P1dB VDS= 9V G1dB IDS f =13.75-14.5GHz 4.5 2-tone test Po=29dBm(SCL) VDS x IDS x Rth -42 5.5 4.0 23 -45 5.0 90 dB A % dBc °C ( Ta= Ta= 25°C ) MIN. TYP. MAX. UNIT 39.0 39.5 dBm CONDITION ηadd IM3 ∆Tch DataSheet4.

  TIM1414-10LA-252   TIM1414-10LA-252






Microwave Power GaAs FET

www.DataSheet4U.com TOSHIBA Oct. 1999 TIM1414-10LA-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Channel Temperature Rise SYMBOL P1dB VDS= 9V G1dB IDS f =13.75-14.5GHz 4.5 2-tone test Po=29dBm(SCL) VDS x IDS x Rth -42 5.5 4.0 23 -45 5.0 90 dB A % dBc °C ( Ta= Ta= 25°C ) MIN. TYP. MAX. UNIT 39.0 39.5 dBm CONDITION ηadd IM3 ∆Tch DataSheet4U.com DataShee 2. ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= Ta= 25°C ) MIN. TYP. MAX. UNIT -2.0 -5 2800 -3.5 -5.0 mS V A V °C/W CONDITION VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS=0V IGS= -145µA Channel to Case gm VGSoff IDSS VGSO Rth(c-c) 10.0 11.5 2.0 2.5 Applications Engineering Solid-State Engineering Department TOSHIBA CORPORATION, Komukai Operations DataSheet4U.com −1− DataSheet4U.com DataSheet 4 U .com .


2006-07-30 : MM914    TIM1414-7    TIM1414-10A    TIM1414-10A-252    TIM1414-10LA    TP8031AH    TP8051AHP    TP8032AH    TP8052AH    TP8751H   


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