TIM1414-2

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz Broadband internally matched Hermetically sealed package RF Performance Specifications (Ta = 25°C) Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS x IDS x Rth (c-c) VDS = 9V f = 14.0 - 14.5 GHz A % °C – – – 0.85 23 – 1.1 – 60 Condition Unit dBm dB Min. 32.5 5.5 Typ. 33.5 6.5 Max – – TIM1414-2 DataShee Electrical Characteristics (Ta = 25°C) Characteristic Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth (c-c) DataSheet4U.com Condition VDS = 3V IDS = 1.0A VDS = 3V IDS = 30 mA VDS = 3V VGS = 0V IGS = -30 µA Channel to Case Unit mS V A V °C/W Min. – -2 – -5 – Typ. 600 -3.5 2.0 – 5 Max. – -5 2.6 – 6 DataSheet4U.com The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA p...