TIM3742-16SL-341

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-16SL-341 TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level „ HIGH POWER P1dB=42.5dBm at 3.3GHz to 3.6GHz „ HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ∆G ( Ta= 25°C ) UNIT dBm dB A dB % dBc A °C MIN. 41.5 10.0    -42   TYP. MAX. 42.5   4.4  36 -45 4.4   5.0 ±0.8   5.0 80 CONDITIONS VDS= 10V f= 3.3 to 3.6GHz ηadd IM3 IDS2 ∆Tch Two-Tone Test Po=31.5dBm (Single Carrier Level) (VDS X IDS + Pin – P1dB) X Rth(c-c) Recommended Gate Resistance(Rg): 100 Ω (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25°C ) UNIT mS V A V °C/W MIN.  -1.0  -5  TYP. 3200 -2.5 10.0  1.4 MAX.  -4.0   2.0 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 5.2A VDS= 3V IDS= 70mA VDS= 3V VGS= 0V IGS= -210µA Channel to Case ‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements ...