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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM4450-16UL
TECHNICAL DATA FEATURES
nHIGH POWER...
www.DataSheet4U.com
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM4450-16UL
TECHNICAL DATA FEATURES
nHIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 ∆G G1dB VDS= 10V dB A dB % Two-Tone Test Po= 31.5dBm
(Single Carrier Level)
(VDS X IDS + Pin – P1dB) X Rth(c-c)
SYMBOL P1dB
CONDITIONS
UNIT dBm
MIN. 41.5 9.0 -44
TYP. MAX. 42.5 10.0 4.4 36 -47 4.4 5.0 ±0.6 5.0 80
f = 4.4 to 5.0GHz
ηadd
IM3
dBc A °C
Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current Gate-Source Breakdown
Voltage Thermal Resistance SYMBOL
gm
VGSoff IDSS VGSO
CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -200µA
UNIT mS V A V °C/W
MIN. -1.0 -5
TYP. MAX. 3600 -2.5 10.5 1.5 -4.0 1.8
Rth(c-c) Channel to Case
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from it...