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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM4450-60SL
TECHNICAL DATA FEATURES
T LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level T HIGH POWER P1dB=48.0dBm at 4.4GHz to 5.0GHz T HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE
RF PERFORMAN...
