MICROWAVE POWER GaAs FET
TIM5964-12UL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 41.5dBm at 5.9GHz to...
MICROWAVE POWER GaAs FET
TIM5964-12UL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 41.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN
G1dB= 10.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION
IM3= -47dBc at Pout= 30.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 2.6A f= 5.9 to 6.4GHz
UNIT dBm dB
A dB
Power Added Efficiency 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
add IM3 IDS2 Tch
%
Two-Tone Test
dBc
Po= 30.5dBm, f= 5MHz
(Single Carrier Level)
A
(VDS IDS Pin P1dB)
Rth(c-c)
°C
Recommended Gate Resistance (Rg): 68
MIN. 40.5 9.0 -44
TYP. MAX.
41.5
10.0
3.2
3.8
0.6
40
-47
2.6
3.0
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current Gate-Source Breakdown
Voltage
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 4.0A VDS= 3V IDS= 40mA VDS= 3V VGS= 0V
VGSO IGS= -140A
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
2.5
V
-1.0 -2.5 -4.0
A
7.2
V
-5
°C/W
2.0
2.4
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION...
