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TIM5964-16SL-422 Datasheet

Part Number TIM5964-16SL-422
Manufacturers Toshiba
Logo Toshiba
Description MICROWAVE POWER GaAs FET
Datasheet TIM5964-16SL-422 DatasheetTIM5964-16SL-422 Datasheet (PDF)

FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.5dBm at 5.85GHz to 6.75GHz ・HIGH GAIN G1dB= 8.0dB(min.) at 5.85GHz to 6.75GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 31.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-16SL-422 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1d.

  TIM5964-16SL-422   TIM5964-16SL-422






MICROWAVE POWER GaAs FET

FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.5dBm at 5.85GHz to 6.75GHz ・HIGH GAIN G1dB= 8.0dB(min.) at 5.85GHz to 6.75GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 31.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-16SL-422 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 4.4A f = 5.85 to 6.75GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 31.5dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 68  MIN. 41.5 8.0    -42   TYP. MAX. 42.5    4.4 5.0  ±0.8 35  -45  4.4 5.0  80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V VGSO IGS= -200A Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  3.6  V -1.0 -2.5 -4.0 A  10.5  V -5   °C/W  1.5 2.0  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLU.


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