FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 44.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 10.0dB at 5.9...
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 44.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM5964-25UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 5.2A f = 5.9 to 6.4GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 33.5dBm, ∆f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 28
MIN. 43.5 9.0 -44
TYP. MAX.
44.5
10.0
6.8
7.6
±0.6
37
-47
5.2
6.0
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 8.0A
VDS= 3V IDS= 80mA
VDS= 3V VGS= 0V
Gate-Source Breakdown
Voltage Thermal Resistance
VGSO Rth(c-c)
IGS= -280A Channel to Case
UNIT MIN. TYP. MAX.
S
5.0
V
-1.0 -2.5 -4.0
A
14.4
V
-5
°C/W
1.2
1.5
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any...
