TIM5964-30SL

MICROWAVE POWER GaAs FET www.DataSheet4U.com MICROWAVE SEMICONDUCTOR TIM5964-30SL TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ∆G CONDITIONS UNIT dBm dB A dB % Two-Tone Test Po=34.5 dBm (Single Carrier Level) (VDS X IDS +Pin – P1dB) X Rth(c-c) MIN. 44.0 7.0    -42   TYP. MAX. 45.0 8.0 7.0  38 -45 7.0    8.0 ±0.8   8.0 100 VDS=10V f = 5.9 to 6.4GHz ηadd IM3 IDS2 ∆Tch dBc A °C Recommended gate resistance(Rg) : Rg= 28 Ω(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 10A VDS= 3V IDS= 100mA VDS= 3V VGS= 0V IGS= -350µA Channel to Case UNIT mS V A V °C/W MIN.  -1.0  -5  TYP. 6300 -2.5 18  1.0 MAX.  -4.0   1.3 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement...