TIM5964-35SLA-251

MICROWAVE POWER GaAs FET www.DataSheet4U.com MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM5964-35SLA-251 „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level „ HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz „ HIGH EFFICIENCY ηadd=39% at 5.9 to 6.75GHz „ HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.75GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current SYMBOL P1dB G1dB IDS1 ∆G VDS= 10V f = 5.9 – 6.75GHz CONDITION UNIT MIN. TYP. MAX. dBm dB A dB % Two Tone Test Po=35.0dBm (Single Carrier Level) 45.0 8.0    -42  45.5 9.0 8.0  39 -45 8.0   9.0 ±0.8   9.0 100 ηadd IM3 IDS2 dBc A Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c) °C   Recommended gate resistance(Rg) : Rg=Rg1(10 Ω)+Rg2(18 Ω)= 28 Ω (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITION VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420µA Channel to Case UNIT MIN. mS  V A V °C/W -1.0  -5  TYP. MAX. 6500  -2.5 20  1.0 -4.0 26  1.3 ‹ The information contained herein is presented only as a guide for the applications of our products. No responsibilit...