FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 9.0dB at 5.9G...
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 9.0dB at 5.9GHz to 6.4GHz ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM5964-35SLA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 8.0A f = 5.9 to 6.4GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 35.0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 28
MIN. 45.0 8.0 -42
TYP. MAX.
45.5
9.0
8.0
9.0
±0.8
39
-45
8.0
9.0
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current Gate-Source Breakdown
Voltage Thermal Resistance
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 10.5A
VDS= 3V IDS= 140mA
VDS= 3V VGS= 0V
VGSO IGS= -420A
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
6.5
V
-1.0 -2.5 -4.0
A
20
V
-5
°C/W
1.0
1.3
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPOR...
