FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 48.0dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 7.5dB at 6.4G...
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 48.0dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 7.5dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 36.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM6472-60SL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 9.5A f = 6.4 to 7.2GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 36.5dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 28
MIN. 47.0 6.5 -42
TYP. MAX.
48.0
7.5
13.2 15.0
±0.8
39
-45
11.8
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current Gate-Source Breakdown
Voltage
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 12.0A
VDS= 3V IDS= 200mA
VDS= 3V VGS= 0V
VGSO IGS= -1.0mA
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
20
V
-1.0 -1.8 -3.0
A
38
V
-5
°C/W
0.6
0.8
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORA...
