FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 41.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN
G1dB= 8.5dB at 7.7G...
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 41.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ・LOW INTERMODULATION DISTORTION
IM3= -47dBc at Pout= 30.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7785-12UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 2.6A f = 7.7 to 8.5GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test Po= 30.5dBm, Δf= 5MHz
dBc
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 68
MIN. 40.5 7.5 -44
TYP. MAX.
41.5
8.5
3.2
3.8
±0.6
38
-47
2.6
3.0
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current Gate-Source Breakdown
Voltage Thermal Resistance
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 4.0A
VDS= 3V IDS= 40mA
VDS= 3V VGS= 0V
VGSO IGS= -140A
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
2.5
V
-1.0 -2.5 -4.0
A
7.2
V
-5
°C/W
2.0
2.4
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATIO...