FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 42.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN
G1dB= 8.5dB at 7.7G...
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 42.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7785-16UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 3.6A f = 7.7 to 8.5GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 31.5dBm, ∆f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 68
MIN. 41.5 7.5 -44
TYP. MAX.
42.5
8.5
4.4
5.0
±0.6
35
-47
4.4
5.0
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 6.0A
VDS= 3V IDS= 60mA
VDS= 3V VGS= 0V
Gate-Source Breakdown
Voltage Thermal Resistance
VGSO Rth(c-c)
IGS= -200A Channel to Case
UNIT MIN. TYP. MAX.
S
3.6
V
-1.0 -2.5 -4.0
A
10.5
V
-5
°C/W
1.5
1.8
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any o...