FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7785-4UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
G...
