MICROWAVE POWER GaAs FET
TIM7785-60ULA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 48.0dBm at 7.7GHz t...
MICROWAVE POWER GaAs FET
TIM7785-60ULA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 48.0dBm at 7.7GHz to 8.5GHz ŋHIGH GAIN
G1dB= 7.5dB at 7.7GHz to 8.5GHz ŋLOW INTERMODULATION DISTORTION
IM3(MIN.)= -25dBc at Pout= 41dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 9.5A f= 7.7 to 8.5GHz
UNIT dBm dB
A dB
Power Added Efficiency 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
add IM3 IDS2 Tch
%
Two-Tone Test Po= 41dBm, f= 5MHz
dBc
(Single Carrier Level)
A
(VDS IDS Pin P1dB)
Rth(c-c)
°C
Recommended Gate Resistance(Rg): 28
MIN. 47.0 6.5 -25
TYP. MAX.
48.0
7.5
14.5 16.0
0.8
36
-30
13.1
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off
Voltage Saturated Drain Current
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 11.0A VDS= 3V IDS= 120mA VDS= 3V VGS= 0V
Gate-Source Breakdown
Voltage
VGSO IGS= -0.4mA
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
15.0
V
-1.0 -1.8 -2.5
A
27
V
-5
°C/W
0.8
1.0
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