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TIP106 Datasheet

Part Number TIP106
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Epitaxial Silicon Darlington Transistor
Datasheet TIP106 DatasheetTIP106 Datasheet (PDF)

TIP105/TIP106/TIP107 — PNP Epitaxial Silicon Darlington Transistor TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 @ 10kW R2 @ 0.6kW R2 E Absolute.

  TIP106   TIP106






Part Number TIP106
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet TIP106 DatasheetTIP106 Datasheet (PDF)

isc Silicon PNP Darlington Power Transistor TIP106 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A = -2.5V(Max)@ IC= -8A ·Complement to Type TIP101 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATI.

  TIP106   TIP106







Part Number TIP106
Manufacturers TAITRON
Logo TAITRON
Description Darlington PNP Power Transistors
Datasheet TIP106 DatasheetTIP106 Datasheet (PDF)

Darlington Power Transistors (PNP) TIP105/106/107 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams TO-220 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description TIP105 VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter.

  TIP106   TIP106







Part Number TIP106
Manufacturers RECTRON
Logo RECTRON
Description Power Transistors
Datasheet TIP106 DatasheetTIP106 Datasheet (PDF)

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max Min Max VCE (V) VCE (SAT) (V) Max VBE (SAT) @ (V) Max IC (A) fT @ IC (MHz) (mA) Min 2N5294 NPN 80 70 7 36 4 5004 50 30 120 0.5 4 1.0 .

  TIP106   TIP106







Part Number TIP106
Manufacturers CDIL
Logo CDIL
Description PNP PLASTIC POWER TRANSISTORS
Datasheet TIP106 DatasheetTIP106 Datasheet (PDF)

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP100 TIP101 TIP102 NPN TIP105 TIP106 TIP107 PNP TO-220 Plastic Package Intended for use in Linear Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto Ta=2.

  TIP106   TIP106







Part Number TIP106
Manufacturers Bourns
Logo Bourns
Description PNP SILICON POWER DARLINGTONS
Datasheet TIP106 DatasheetTIP106 Datasheet (PDF)

Copyright © 1997, Power Innovations Limited, UK TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with TIP100, TIP101 and TIP102 q 80 W at 25°C Case Temperature q 8 A Continuous Collector Current q Maximum VCE(sat) of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW) B1 C2 E3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL .

  TIP106   TIP106







PNP Epitaxial Silicon Darlington Transistor

TIP105/TIP106/TIP107 — PNP Epitaxial Silicon Darlington Transistor TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 @ 10kW R2 @ 0.6kW R2 E Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage : TIP105 : TIP106 : TIP107 Collector-Emitter Voltage : TIP105 : TIP106 : TIP107 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of a.


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