isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A ·Collector-Emit...
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 4A ·Complement to Type TIP135 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
60
V
VCEO
Collector-Emitter
Voltage
60
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
12
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25℃ Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
0.3
A
70 W
2
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
TIP130
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.785 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W
isc website:www.iscsemi.com
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isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= 4A; IB= 16mA
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= 6A, IB= 30mA
VBE(on) Base-Emitter ...