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TIP137

ON Semiconductor

Silicon Power Transistors

TIP131, TIP132 (NPN), TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose ampl...


ON Semiconductor

TIP137

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Description
TIP131, TIP132 (NPN), TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. Features High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) − TIP131 = 100 Vdc (Min) − TIP132, TIP137 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 6.0 Adc Monolithic Construction with Built−In Base−Emitter Shunt Resistors Pb−Free Packages are Available* MAXIMUM RATINGS Rating TIP132 Symbol TIP131 TIP137 Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Peak VCEO VCB VEB IC 80 100 80 100 5.0 8.0 12 Vdc Vdc Vdc Adc Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TA = 25°C Operating and Storage Junction, Temperature Range IB PD PD TJ, Tstg 300 70 ...




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