isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A ·Collector-Emi...
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS) = 60V(Min) ·Complement to Type TIP145T ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
60
V
VCEO Collector-Emitter
Voltage
60
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
0.5
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.56 ℃/W
TIP140T
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isc Silicon NPN Darlington Power Transistor
TIP140T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 30mA, IB= 0
60
V
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= 5A ,IB= 10mA
2.0
V
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= 10A ,IB= 40mA
3.0
V
VBE(sat) Base-Emitter Saturation
Voltage
IC= 10A ,IB= 40mA
3.5
V
VBE(on) Base-Emitter On
Voltage
IC= 10A ; VCE= 4V
3.0
V
ICBO
Co...
