TIP141F

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Complement to Type TIP146F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 80 V 80 V 5 V 10 A 15 A 0.5 A 60 W 150 ℃ -65~150 ℃ TIP141F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 4V ICBO Collector Cutoff current VCB= 80V, IE= 0 ICEO Collector Cutoff current VCE= 40V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 5A ; VCE...