isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC = 4A ·Coll...
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC = 4A ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type TIP2955 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
100
V
VCEO Collector-Emitter
Voltage
60
V
VEBO
Emitter-base
Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current
7
A
PC
Collector Power Dissipation@TC=25℃
90
W
Tj
Junction Tmperature
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c Thermal Resistance,Junction to Case
1.39 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W
TIP3055
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
TIP3055
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= 4A ;IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= 10A ;IB= 3.3A
VBE(on) Base-Emitter On
Voltage
IC= 4A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB=0
ICBO
Collector Cutoff Current
VCB= 100V; IE=0
IEBO
Emitter Cutoff Curr...
