MOSFETs Silicon N-Channel MOS (DTMOS)
TK290A60Y
TK290A60Y
1. Applications
• Switching Voltage Regulators
2. Features
...
MOSFETs Silicon N-Channel MOS (DTMOS)
TK290A60Y
TK290A60Y
1. Applications
Switching
Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.23 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.45mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage Gate-source
voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation
voltage (RMS) Mounting torque
(Tc = 25 ) (Tc = 100 ) (Tc = 25 ) (Tc = 25 )
(t = 1.0 s)
(Note 1) (Note 1) (Note 1)
(Note 2)
(Note 1) (Note 1)
VDSS VGSS
ID ID IDP PD EAS IAS IDR IDRP Tch Tstg VISO(RMS) TOR
600 ±30 11.5 7.3 46 35 114
3 11.5 46 150 -55 to 150 2000 0.6
V
A A A W mJ A
A V Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing ...