Search by part number and manufacturer or description
TK30A06N1 - INCHANGE
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK30A06N1，ITK30A06N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 12.2mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg.
| Distributor | Stock | Price | Buy |
|---|
The same part from a different manufacturer
Related Product
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK30A06J3A |
Toshiba Semiconductor |
MOSFET |
|
| 2 | TK30E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | TK30E06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | TK30J25D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | TK30J25D |
INCHANGE |
N-Channel MOSFET |
|
| 6 | TK30S06K3L |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 7 | TK31A60W |
Toshiba |
Silicon N-Channel MOSFET |
|
| 8 | TK31A60W |
INCHANGE |
N-Channel MOSFET |
|
| 9 | TK31E60W |
Toshiba |
Silicon N-Channel MOSFET |
|
| 10 | TK31E60W |
INCHANGE |
N-Channel MOSFET |
|