N-Channel MOSFET. TK31V60X Datasheet
Silicon N-Channel MOSFET
|Total Page||10 Pages|
MOSFETs Silicon N-Channel MOS (DTMOS-H)
• Switching Voltage Regulators
(1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) High-speed switching properties with lower capacitance.
(3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)
3. Packaging and Internal Circuit
5: Drain (Heatsink)
Please use the source1 pin for
gate input signal return. Make
sure that the main current flows
into the source2 pins.
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
VDSS 600 V
Drain current (DC)
Drain current (pulsed)
(Tc = 25)
PD 240 W
Single-pulse avalanche energy
IAR 7.7 A
Reverse drain current (DC)
Reverse drain current (pulsed)
Tstg -55 to 150
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
5. Thermal Characteristics
Channel-to-case thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 10 mH, RG = 25 Ω, IAR = 7.7 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
@ 2014 :: Datasheetspdf.com ::|