TK380P60Y

MOSFETs Silicon N-Channel MOS (DTMOS) TK380P60Y TK380P60Y 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Tc = 25 ) (Note 1) ID 9.7 A Drain current (DC) (Tc = 100 ) (Note 1) ID 6.1 A Drain current (pulsed) (Tc = 25 ) (Note 1) IDP 38.8 A Power dissipation (Tc = 25 ) PD 80 W Single-pulse avalanche energy (Note 2) EAS 104 mJ Single-pulse avalanche current IAS 2.5 A Reverse drain current (DC) (Note 1) IDR 9.7 Reverse drain current (pulsed) (Note 1) IDRP 38.8 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbo...