MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P55D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-...
MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P55D
1. Applications
Switching
Voltage Regulators
2. Features
(1) Low drain-source on-resistance : RDS(ON) = 1.5 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.0 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 550 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK4P55D
DPAK
1: Gate 2: Drain (Heatsink) 3: Source
Start of commercial production
2009-12
1
2015-03-05
Rev.1.0
TK4P55D
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage
VDSS
550
V
Gate-source
voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
4
A
Drain current (pulsed)
(Note 1)
IDP
16
Power dissipation
(Tc = 25 )
PD
80
W
Single-pulse avalanche energy
(Note 2)
EAS
139
mJ
Avalanche current
(Note 3)
IAR
4
A
Repetitive avalanche energy
(Note 3)
EAR
8
mJ
Reverse drain current (DC)
(Note 1)
IDR
4
A
Reverse drain current (pulsed)
(Note 1)
IDRP
16
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design t...