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TK7A65W Datasheet

Part Number TK7A65W
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet TK7A65W DatasheetTK7A65W Datasheet (PDF)

Isc N-Channel MOSFET Transistor TK7A65W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 780mΩ (MAX) ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 6.8 A IDM Dr.

  TK7A65W   TK7A65W






Part Number TK7A65W
Manufacturers Toshiba
Logo Toshiba
Description N-Channel MOSFET
Datasheet TK7A65W DatasheetTK7A65W Datasheet (PDF)

MOSFETs Silicon N-Channel MOS (DTMOS) TK7A65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.64 Ω(typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.25 mA) 3. Packaging and Internal Circuit TK7A65W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating .

  TK7A65W   TK7A65W







N-Channel MOSFET

Isc N-Channel MOSFET Transistor TK7A65W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 780mΩ (MAX) ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 6.8 A IDM Drain Current-Single Pulsed 27.2 A PD Total Dissipation @TC=25℃ 30 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 4.17 UNIT ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=3.4A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 650V; VGS= 0V VSDF Diode forward voltage IDR =6.8A, VGS = 0 V TK7A65W MIN TYP MAX UNIT 650 V 2.5 3.5 V 780 mΩ ±1 μA 100 μA 1.7 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inform.


2020-11-09 : 2N5882    2N5880    TK8A45D    TK70J06K3    TK5A65D    TK7P50D    TK6P53D    TK5P53D    TK5P50D    TK4P60DB   


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